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GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology

机译:GaN横向肖特基二极管具有高BALIGA的型号,利用自我终端,低损伤阳极凹陷技术

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AlGaN/GaN lateral diodes on silicon are considered very promising for next generation power conversion systems owing to the excellent material properties. Typically, the anode recess is a frequently-used and effective technology in reducing the SBD's VONand$mathrm{R}_{mathrm{ON},mathrm{SP}}$[1]. However, the rough surface morphology and poor recess depth control in common dry etching are two critical issues that would lead to an increased leakage current and premature breakdown [2]. In this report, we employ a LPCVD$mathrm{Si}_{3}mathrm{N}_{4}$compatible self-terminated, and plasma-free recess technique in an AlGaN/GaN double channel anode-recessed SBD. The anode region is prevented from plasma bombardment and the recess could stop precisely at the upper heterojunction interface with a smooth surface morphology. The SBD with a$15 mu mathrm{m} L_{mathrm{AC}}$exhibits a low$mathrm{R}_{mathrm{ON},mathrm{SP}}$of$1.32 mathrm{m}Omegacdot mathrm{cm}^{2}$, a remarkable$V_{mathrm{ON}}$uniformity and a leakage current of$sim 0.2 mu mathrm{A}/mathrm{mm}$at ?300 V. Moreover, with the assistance of high quality LPCVD$mathrm{Si}_{3}mathrm{N}_{4}$, a 1.2kV breakdown voltage and a high Baliga'$mathrm{s}$figure-of-merit of$1.1mathrm{GW}/mathrm{cm}^{2}$are ultimately achieved in the same device.
机译:在硅上的AlGaN / GaN的横向二极管被认为是由于优异的材料性质下一代功率转换系统很有希望的。典型地,阳极凹部是经常使用的,有效的技术在降低SBD上的A上和 $ mathrm {R} _ { mathrm {ON}, mathrm {SP}} $ [1]。然而,粗糙的表面形貌和在共同干式蚀刻差凹陷深度控制是,这将导致增加的漏电流和过早击穿[2]两个关键问题。在这份报告中,我们采用了LPCVD $ mathrm {的Si} _ {3} mathrm {N} _ {4} $ 兼容的自终止,并且无等离子体凹槽技术中的AlGaN / GaN双通道阳极凹陷SBD。阳极区从等离子体轰击防止和凹部可以在具有光滑的表面形态上异质结界面精确地停止。用的SBD $ 15 亩 mathrm {米} 大号_ { mathrm {AC}} $ 表现出低 $ mathrm {R} _ { mathrm {ON}, mathrm {SP}} $ $ 1.32 mathrm {M} 欧米茄 CDOT mathrm {厘米} ^ {2} $ ,一个显着 $ V _ { mathrm {ON }} $ 均匀性和的漏电流 $ SIM 0.2 亩 mathrm {A} / mathrm {毫米} $ 在?300 V.此外,以高品质的服务LPCVD $ mathrm {的Si} _ {3} mathrm {N} _ {4} $ 中,1.2KV击穿电压和高Baliga” $ mathrm {S} $ 图品质因数的 $ 1.1 mathrm {GW} / mathrm {厘米} ^ {2} $ 在同一设备中最终实现。

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