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GaN-based Schottky diode with partially recessed anode
GaN-based Schottky diode with partially recessed anode
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机译:阳极部分凹陷的GaN基肖特基二极管
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摘要
A semiconductor device such as a Schottky diode is provided which includes a substrate, a first active layer disposed over the substrate and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A first electrode has a first portion disposed in a recess in the second active layer and a second portion disposed on the second active layer such that a Schottky junction is formed therewith. A second electrode is in contact with the first active layer. The second electrode establishes an ohmic junction with the first active layer.
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