GaN GaN-BASED SCHOTTKY DIODE HAVING PARTIALLY RECESSED ANODE

摘要

A semiconductor device is provided, such as a Schottky diode, comprising a substrate, a first active layer disposed over the substrate, and a second active layer disposed over the first active layer. The second active layer has a larger bandgap than the first active layer such that a two-dimensional electron gas layer occurs between the first and second active layers. The first electrode has a first portion disposed in the recess in the second active layer, and a second portion disposed on the second active layer to form a Schottky junction with the second active layer. The second electrode is in contact with the first active layer. The second electrode forms an ohmic junction with the first active layer.