All CVD Boron Nitride Encapsulated Graphene FETs

摘要

Graphene is at the forefront of 2D material research, with many reports demonstrating the possibility of large area growth by means of chemical vapor deposition (CVD) [1]–[3]. Boron Nitride (BN) has been suggested to be the favorable substrate and encapsulation material for graphene devices as it preserves the intrinsic mobility performance [4]–[6]. However, the demonstration of BN-encapsulated graphene field effect transistors (GFETs) is so far limited to devices made from manually exfoliated flakes. Here, we report on CVD grown GFETs encapsulated by CVD grown BN with CMOS compatible nickel (Ni) edge contacts to the channel and discuss their performance.