Logic Inverter Implemented with CVD-Assembled Graphene FET on Hexagonal Boron Nitride

摘要

We demonstrate one of the basic building elements of graphene electronics, logic inverter, based on graphene-on-boron nitride material system. The inverter is composed of two adjacent graphene-channel field-effect transistors (GFETs). The impacts of hexagonal boron nitride, a new supporting substrate material, on major device performance metrics of GFET such as small-signal transconductance g m and effective carrier mobility μ_eff are explored. The prototype of logic inverter is demonstrated on a single sheet of CVD-assembled monolayer graphene based on the unique ambipolar conduction behavior of the 2-D nanoscale carbon system.