Exploring carrier transport phenomena in a CVD-assembled graphene FET on hexagonal boron nitride

摘要

The supporting substrate plays a crucial role in preserving the superb electrical characteristics of an atomically thin 2D carbon system. We explore carrier transport behavior in a chemical-vapor-deposition- (CVD-) assembled graphene monolayer on hexagonal boron nitride (h-BN) substrate. Graphene-channel field-effect transistors (GFETs) were fabricated on ultra-thin h-BN multilayers to screen out carrier scattering from the underlying SiO _2 substrate. To explore the transport phenomena, we use three different approaches to extract carrier mobility, namely, effective carrier mobility (eff), intrinsic carrier mobility, and field-effect mobility (FE). A comparative study has been conducted based on the electrical characterization results, uncovering the impacts of supporting substrate material and device geometry scaling on carrier mobility in GFETs with CVD-assembled graphene as the active channel.