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APSUNY Process Design Kit (PDKv3.0): O, C and L Band Silicon Photonics Component Libraries on 300mm Wafers

机译：APSUNY工艺设计套件（PDKv3.0）：300mm晶圆上的O，C和L带硅光子学组件库

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摘要

An updated process design kit (APSUNY PDKv3.0) is introduced with verified passive and active O+C+L band silicon photonics component libraries, which includes 50Gbaud (100Gbps) capable modulators, high yield splitters and detectors on 300mm SOI wafers.

机译：引入了经过更新的工艺设计套件（APSUNY PDKv3.0），其中包含经过验证的无源和有源O + C + L带硅光子学组件库，其中包括在300mm SOI晶片上具有50Gbaud（100Gbps）的调制器，高良率分光器和检测器。

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《Optical Fiber Communications Conference and Exhibition 》|2019年|1-3|共3页
会议地点
作者
Erman Timurdogan; Zhan Su; Ren-Jye Shiue; Christopher V. Poulton; Matthew J. Byrd; Simon Xin; Michael R. Watts;
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原文格式 PDF
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中图分类
关键词
elemental semiconductors; integrated optoelectronics; optical beam splitters; optical modulation; photodetectors; silicon; silicon-on-insulator;

机译：元素半导体;集成光电;分束器;光调制;光电探测器;硅;绝缘体上硅;

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专利

1. Silicon Photonic Circuit Design Using Rapid Prototyping Foundry Process Design Kits [J] . Chrostowski Lukas, Shoman Hossam, Hammood Mustafa, IEEE journal of selected topics in quantum electronics . 2019 ,第5期

机译：使用快速原型铸造工艺设计套件进行硅光子电路设计
2. Silicon Photonic Circuit Design Using Rapid Prototyping Foundry Process Design Kits [J] . Chrostowski Lukas, Shoman Hossam, Hammood Mustafa, IEEE journal of selected topics in quantum electronics . 2019 ,第5期

机译：硅光子电路设计采用快速原型制作工艺设计套件
3. SILICON WAFERS: TIGHT MARKET BALANCE FOR 200mm AND 300mm WAFERS [J] . Roskill's Letter from Japan . 2017 ,第494期

机译：硅晶片：200mm和300毫米晶圆的紧密市场平衡
4. APSUNY Process Design Kit (PDKv3.0): O, C and L Band Silicon Photonics Component Libraries on 300mm Wafers [C] . Erman Timurdogan, Zhan Su, Ren-Jye Shiue, Optical Fiber Communications Conference and Exhibition . 2019

机译：APSUNY Process Design Kit（PDKV3.0）：o，c和l频带硅光子图案组件库300mm晶圆上
5. Advanced processing methods for microelectronics industry silicon wafer handling components. [D] . Wang, Hongyun. 1999

机译：用于微电子行业的硅晶片处理组件的先进处理方法。
6. Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma [O] . Hisaki Kikuchi, Katsuyuki Takahashi, Seiji Mukaigawa, 2021

机译：硅晶片蚀刻速率特性具有突发宽度使用150 kHz带高功率突发电感耦合等离子体
7. JPSA offers 300mm silicon wafer singulation capability [O] . 2006

机译：JPSA提供300mm硅片切割能力

APSUNY Process Design Kit (PDKv3.0): O, C and L Band Silicon Photonics Component Libraries on 300mm Wafers

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