APSUNY Process Design Kit (PDKv3.0): O, C and L Band Silicon Photonics Component Libraries on 300mm Wafers

机译：APSUNY Process Design Kit（PDKV3.0）：o，c和l频带硅光子图案组件库300mm晶圆上

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摘要

An updated process design kit (APSUNY PDKv3.0) is introduced with verified passive and active O+C+L band silicon photonics component libraries, which includes 50Gbaud (100Gbps) capable modulators, high yield splitters and detectors on 300mm SOI wafers.

机译：更新的流程设计套件（APSUNY PDKV3.0）被验证的被动和有源o + C + L带硅光子图书馆引入，包括50gbaud（100Gbps）的能力调制器，高屈服分离器和300mm SOI晶片上的探测器。

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《Optical Fiber Communications Conference and Exhibition》|2019年|637 p. :|共3页
会议地点
作者
Erman Timurdogan; Zhan Su; Ren-Jye Shiue; Christopher V. Poulton; Matthew J. Byrd; Simon Xin; Michael R. Watts;
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原文格式 PDF
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中图分类 TN92-532;
关键词
elemental semiconductors; integrated optoelectronics; optical beam splitters; optical modulation; photodetectors; silicon; silicon-on-insulator;

机译：元素半导体;集成光电子;光束分离器;光学调制;光电探测器;硅;绝缘体;

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专利

1. Silicon Photonic Circuit Design Using Rapid Prototyping Foundry Process Design Kits [J] . Chrostowski Lukas, Shoman Hossam, Hammood Mustafa, IEEE journal of selected topics in quantum electronics . 2019,第5期

机译：使用快速原型铸造工艺设计套件进行硅光子电路设计
2. Silicon Photonic Circuit Design Using Rapid Prototyping Foundry Process Design Kits [J] . Chrostowski Lukas, Shoman Hossam, Hammood Mustafa, IEEE journal of selected topics in quantum electronics . 2019,第5期

机译：硅光子电路设计采用快速原型制作工艺设计套件
3. SILICON WAFERS: TIGHT MARKET BALANCE FOR 200mm AND 300mm WAFERS [J] . Roskill's Letter from Japan . 2017,第494期

机译：硅晶片：200mm和300毫米晶圆的紧密市场平衡
4. APSUNY Process Design Kit (PDKv3.0): O, C and L Band Silicon Photonics Component Libraries on 300mm Wafers [C] . Erman Timurdogan, Zhan Su, Ren-Jye Shiue, Optical Fiber Communications Conference and Exhibition . 2019

机译：APSUNY工艺设计套件（PDKv3.0）：300mm晶圆上的O，C和L带硅光子学组件库
5. Advanced processing methods for microelectronics industry silicon wafer handling components. [D] . Wang, Hongyun. 1999

机译：用于微电子行业的硅晶片处理组件的先进处理方法。
6. Silicon Wafer Etching Rate Characteristics with Burst Width Using 150 kHz Band High-Power Burst Inductively Coupled Plasma [O] . Hisaki Kikuchi, Katsuyuki Takahashi, Seiji Mukaigawa, 2021

机译：硅晶片蚀刻速率特性具有突发宽度使用150 kHz带高功率突发电感耦合等离子体
7. JPSA offers 300mm silicon wafer singulation capability [O] . 2006

机译：JPSA提供300mm硅片切割能力

APSUNY Process Design Kit (PDKv3.0): O, C and L Band Silicon Photonics Component Libraries on 300mm Wafers

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