Parallel Modeling Fully Coupled Multiphysics Process in Resistive Random Access Memory Array

摘要

A high-performance numerical scheme is proposed for fully coupled electrothermal simulation of electrothermal effects in resistive switching random access memory (RRAM) arrays. To enhance its capability for fast solving large scale problem, a J parallel adaptive unstructured mesh infrastructure and domain decomposition method (DDM) based double-level parallel scheme is employed to implement a parallel simulator. The performance of the developed simulator is validated by comparing with that of COMSOL Multiphysics. Further, the influence of conductive filament (CF) shape in the RRAM arrays on their electrothermal characteristics are investigated and analyzed.