Is FD-SOI immune to Floating Body Effects?

摘要

Evidence for floating-body effects (FBE) in fully-depleted SOI with thickness below 25 nm is found from experiments. We investigate several facets of FBE: parasitic bipolar action, kink effect, transient current, hysteresis, steep subthreshold slope and meta-stable dip. The body potential is measured together with the drain current in order to demonstrate their close correlation, in particular for out-of-equilibrium operation. The FBEs are shown to interfere with gate tunneling and super-coupling effects.