Analysis of various parameters of double gate junctionless MOSFET using Ge-source with High-k Spacer

摘要

The enhanced performance of a Symmetrical Double Gate Junctionless MOSFET (DG JL MOSFET) is presented using Germanium Material as Source. The characteristics of Ge-Source DG JL MOSFET are compared with Si-Source and demonstrated by simulating with Sentaurus TCAD Toolkit. Germanium with high mobility and lower band gap provides an improvement in various parameters like On Current (I_on), Off current (I_off), subthreshold swing (SS), Threshold Voltage (V_th) and I_on-I_off ratio. The parameter values are improved further for Ge-Source along with High-k Spacer because High-k Dielectric material increases On current and reduces the leakage current.