Performance Comparison of fast Silicon and Silicon Carbide Devices Used with Conventional PCBs and Embedded into PCBs

摘要

Modern semiconductor switches based on silicon carbide (SiC), gallium nitride (GaN) but also Silicon (Si) cause higher and higher di/dt and dv/dt magnitudes in power electronic circuits. To utilize maximum switching efficiency and achieve minimum over voltages at the devices commutation loops have to be designed very carefully. One option to minimize commutation inductance is the embedding of the semiconductor chip into the printed circuit board itself. The presented paper compares silicon and silicon carbide switching devices experimentally both with conventional PCB operation and embedded into PCBs, manufactured by TU Berlin and RUWEL International within the project FLIP, funded by the German government.