Double Side Sintered IGBT + FRD, 650 V / 200 A, in a STO247 Package for High Performance Automotive Applications

摘要

Double side sintered STO247 type packaged devices from Renesas Electronics America (REA) (tentative part number: xJH6501DPz, currently under development) are benchmarked against the leading device on the market used in high performance electric cars. The Renesas component utilize 650 V, 200 A rated IGBT die copackaged with a similarly rated companion FRD die. Both components are interchangeable on the same board footprint, since the dimensions are approximately the same. Samples of both devices were tested at a delta Tj of 85 deg C and the xJH6501DPZ proved to be at least 12 times more reliable than the leading device on the market (which failed at around 12 k cycles and the Renesas parts are still electrically functioning and within target specification after 150k cycles). The fully sintered Renesas STO247 packaged samples were also subjected to a delta Tj of 110 deg C and demonstrated no signs of failure, even after 350 k cycles.