Double Side Sintered IGBT + FRD, 650V/200A, in a STO247 Package for High Performance Automotive Applications

摘要

Double side sintered STO247 type packaged devices from Renesas Electronics America (REA) (tentative part number: xJH6501DPz, currently under development) are benchmarked against the leading device on the market used in high performance electric cars. The Renesas component utilize 650V, 200A rated IGBT die co-packaged with a similarly rated companion FRD die. Both components are interchangeable on the same board footprint, since the dimensions are approximately the same. Samples of both devices were tested at a delta Tj of 85°C and the xJH6501DPZ proved to be at least 12 times more reliable than the leading device on the market (which failed at around 12k cycles and the Renesas parts are still electrically functioning and within target specification after 150k cycles). The fully sintered Renesas STO247 packaged samples were also subjected to a delta Tj of 110°C and demonstrated no signs of failure, even after 350k cycles.