RRAM technology and its embedded potential on IoT applications

摘要

A highly reliable, substrate independent, and cost-effective (2 extra-masks) HfO2-based Resistive-Random-Access-Memory (RRAM) with post-cycling data retention > 90°C 10 years, post-cycling dynamic HTOL (high-temperature high-Vcc operating lifetime > 125°C 1000hrs), million cycle endurance, available for triple IR re-flow 260°C thermal cycle, byte-erasable, read-disturb immunity > 10years, and low-energy consumption is achieved by 90nm logic node on 300mm pilot-line and has been applied on 3.3V standalone Flash-like products and 3.3V/1.2V dual-power eFlash-like macros. Both SPI and I2C interfaces are available to support > 104MHz fast read and EEPROM solution, respectively. HfO2 film is inserted between M1/M2 and furthermore can sustain extra BEoL thermal cycle of > 430°C 1hrs and wafer-level-chip-scaled-package (WLCSP) thermal cycle of > 250°C 6hrs without degrading performance, indicating RRAM can support to embed into existed technologies with high thermal budget. Atomic-level simulator and Verilog simulator supports corresponded filament behaviors. According to properties, RRAM technology offers high potential for various IoT applications, such as high-temperature environment operating device, V2V device, wearable device, industrial sensing device, and smart-home, and so on.