Fast-Write Resistive RAM (RRAM) for Embedded Applications

Sheu Shyh-ShyuanCheng Kuo-HsingChang Meng-FanChiang Pei-ChiaLin Wen-PinLee Heng-YuanChen Pang-ShiuChen Yu-ShengChen Frederick T.Tsai Ming-Jinn

首页> 外文期刊>Design & Test of Computers, IEEE >Fast-Write Resistive RAM (RRAM) for Embedded Applications

【24h】

Fast-Write Resistive RAM (RRAM) for Embedded Applications

机译：面向嵌入式应用的快速写入电阻RAM（RRAM）

获取原文

获取原文并翻译 | 示例

开具论文收录证明 >>

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

Editor's note:Especially for microcontroller and mobile applications, embedded nonvolatile memory is an important technology offering to reduce power and provide local persistent storage. This article describes a new resistive RAM device with fast write operation to improve the speed of embedded nonvolatile memories.—Leland Chang, IBM T.J. Watson Research Center

机译：编者注：特别是对于微控制器和移动应用，嵌入式非易失性存储器是一项重要技术，可降低功耗并提供本地持久性存储。本文介绍了一种新型电阻RAM器件，该器件具有快速的写操作，可提高嵌入式非易失性存储器的速度。沃森研究中心

著录项

来源
《Design & Test of Computers, IEEE》 |2011年第1期|p.64-71|共8页
作者
Sheu Shyh-ShyuanCheng Kuo-HsingChang Meng-FanChiang Pei-ChiaLin Wen-PinLee Heng-YuanChen Pang-ShiuChen Yu-ShengChen Frederick T.Tsai Ming-Jinn;
展开▼
作者单位

National Central University Industrial Technology Research Institute, Taoyuan Hsinchu;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
RRAM; design and test; fast access speed; multilevel; nonvolatile memory; resistive RAM;

机译：RRAM;设计和测试;快速访问速度;多层;非易失性存储器;电阻性RAM;

相似文献

外文文献
中文文献
专利

1. Impact of oxygen composition of ZnO metal-oxide on unipolar resistive switching characteristics of Al/ZnO/Al resistive RAM (RRAM) [J] . Lin Cheng-Li, Tang Chi-Chang, Wu Shu-Ching, Microelectronic Engineering . 2015,第mara25期

机译：ZnO金属氧化物的氧组成对Al / ZnO / Al电阻RAM（RRAM）的单极电阻转换特性的影响
2. Tuning Resistive, Capacitive, and Synaptic Properties of Forming Free TiO_(2-x)-Based RRAM Devices by Embedded Pt and Ta Nanocrystals [J] . Panagiotis Bousoulas, Ismini Karageorgiou, Vaggelis Aslanidis, Physica status solidi . 2018,第3期

机译：通过嵌入的Pt和Ta纳米晶体调节形成基于TiO_（2-x）的基于TiO_（2-x）的RRAM器件的电阻，电容和突触特性
3. Impact of Temperature on the Resistive Switching Behavior of Embedded $hbox{HfO}_{2}$-Based RRAM Devices [J] . Walczyk C., Walczyk D., Schroeder T., Electron Devices, IEEE Transactions on . 2011,第9期

机译：温度对基于嵌入式$ hbox {HfO} _ {2} $的RRAM器件的电阻切换行为的影响
4. Circuit design challenges in embedded memory and resistive RAM (RRAM) for mobile SoC and 3D-IC [C] . Meng-Fan Chang, Pi-Feng Chiu, Shyh-Shyuan Sheu 2011 16th Asia and South Pacific Design Automation Conference . 2011

机译：面向移动SoC和3D-IC的嵌入式存储器和电阻RAM（RRAM）中的电路设计挑战
5. Resistive Switching Random Access Memory (RRAM): Analysis, Modeling, and Characterization Toward Practical Applications [D] . Jiang, Zizhen. 2020

机译：电阻切换随机存取存储器（RRAM）：对实际应用的分析，建模和表征
6. Resistive Random Access Memory (RRAM): an Overview of Materials Switching Mechanism Performance Multilevel Cell (mlc) Storage Modeling and Applications [O] . Furqan Zahoor, Tun Zainal Azni Zulkifli, Farooq Ahmad Khanday 2020

机译：电阻性随机存取存储器（RRAM）：材料交换机制性能多层单元（mlc）存储建模和应用概述
7. Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor [O] . Rocha, P. R. F., Kiazadeh, A., Chen, Q., 2014

机译：基于塑料半导体的电阻式随机存取存储器（RRAMS）的动态行为

Fast-Write Resistive RAM (RRAM) for Embedded Applications

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅