机译:基于混合RRAM(HfO2)/ 28 nm FDSOI CMOS技术的128 kb嵌入式非易失性存储器的设计和仿真
Institute of Materials Microelectronics and Nanosciences of Provence – UMR CNRS 7334, Aix-Marseille University, Marseille, France;
Institute of Materials Microelectronics and Nanosciences of Provence – UMR CNRS 7334, Aix-Marseille University, Marseille, France;
Institute of Materials Microelectronics and Nanosciences of Provence – UMR CNRS 7334, Aix-Marseille University, Marseille, France;
Institute of Materials Microelectronics and Nanosciences of Provence – UMR CNRS 7334, Aix-Marseille University, Marseille, France;
Institute of Materials Microelectronics and Nanosciences of Provence – UMR CNRS 7334, Aix-Marseille University, Marseille, France;
Institut des Nanotechnologies de Lyon, CNRS UMR 5270, Villeurbanne, France;
CMP, University Grenoble Alpes, Grenoble, France;
University Grenoble Alpes, Grenoble, France;
University Grenoble Alpes, Grenoble, France;
University Grenoble Alpes, Grenoble, France;
University Grenoble Alpes, Grenoble, France;
University Grenoble Alpes, Grenoble, France;
Nonvolatile memory; CMOS technology; Switches; Semiconductor device modeling; Hafnium compounds; MOSFET; Random access memory;
机译:采用1×nm CMOS逻辑技术的1-kb FinFET介电电阻随机存取存储器阵列,用于嵌入式非易失性存储器应用
机译:具有8 T SRAM单元和数据相关写入辅助功能的32 kb 0.35–1.2 V,50 MHz–2.5 GHz比特交错SRAM,采用28nm UTBB-FDSOI CMOS
机译:基于90 nm CMOS / MTJ混合内存中逻辑架构的基于非易失性关联存储器的上下文驱动搜索引擎
机译:0.36V 128Kb 6T SRAM,具有节能的动态主体偏置功能,并在28nm FDSOI中预测输出数据
机译:通过VLSI CMOS和非易失性存储器件中的氮化技术提高了氧化物的可靠性。
机译:基于180nm CMOS技术的基于MEMS的振荡器设计
机译:基于混合RRAM(HFO2)/ 28 NM FDSOI CMOS技术的128 kB嵌入式非易失性存储器的设计与仿真