A 0.36V 128Kb 6T SRAM with energy-efficient dynamic body-biasing and output data prediction in 28nm FDSOI

摘要

This paper presents a low-voltage, energy-efficient SRAM designed in a 28nm fully depleted SOI (FDSOI) technology. The SRAM achieves a minimum Vdd of 0.36V, while still having the area advantage by using 6T bit-cells. Dynamic forward body-biasing (DFBB) is used to improve the write margin. The proposed implementation of DFBB provides a 4.5× improvement in energy overhead compared to a conventional implementation. It also helps in reducing the switching energy for half-selected bit-lines. An average energy/bit-access of 52.5fJ has been achieved at 0.45V. Furthermore, by implementing data prediction in the read-path, up to 36% dynamic energy savings can be obtained.