Design and Analysis of Novel InSb/Si Heterojunction Double Gate Tunnel Field Effect Transistor

摘要

In this work, an InSb/Si heterojunction hetero gate dielectric double gate TFET (HTFET) having a split pocket at Source-Channel junction has been designed and its analog/RF performance has been investigated. The analog/RF performance of the device is analysed in terms of I-V characteristics, transconsuctance (gm), parasitic capacitances, cut-off frequency (fT) and gain bandwidth product (GBW). Maximum fT of 777.8 GHz, maximum GBW of 393 GHz and a ION/IOFF ratio of 1010 were obtained from the simulations carried out. Further, circuit level performance analysis is performed by implementing a common source (CS) amplifier based on HTFET, using look-up table based Verilog-A model; a 3-dB roll-off frequency of 55.0981 GHz and unity gain cut-off frequency of 1.4652 THz were achieved.