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Alpha-particle and neutron-induced single-event transient measurements in subthreshold circuits

机译:亚阈值电路中的α粒子和中子诱发的单事件瞬态测量

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Experimental data from alpha particle, neutron, and heavy ion testing are discussed and analyzed from a sub-threshold voltage SET characterization circuit. Using a Schmitt trigger inverter target chain fabricated in a 28-nm bulk CMOS process, SET pulse widths are captured from an operating voltage down to 0.32 V. These results show that energetic particles can induce SET pulse widths that range up to hundreds of nanoseconds when operating at voltages well below the nominal voltage. Additionally, the results show that sub-Vt circuits are significantly more susceptible, as compared to circuits operating at nominal voltages, to low-energy particles inducing SETs that have a high probability of being latched as errors in a combinatorial logic design.
机译:通过亚阈值电压SET表征电路讨论和分析了来自α粒子,中子和重离子测试的实验数据。使用采用28nm批量CMOS工艺制造的施密特触发器反相器目标链,可以从低至0.32 V的工作电压捕获SET脉冲宽度。这些结果表明,高能粒子在产生电压时可以感应出高达数百纳秒的SET脉冲宽度。在远低于标称电压的电压下工作。此外,结果表明,与在标称电压下工作的电路相比,sub-Vt电路更容易受到低能粒子感应SET的影响,而SET在组合逻辑设计中极有可能被锁为错误。

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