机译:改进的片内自触发单事件瞬态测量电路设计和应用
Tsinghua Univ, Dept Engn Phys, Key Lab Particle & Radiat Imaging, Minist Educ, Beijing 100084, Peoples R China;
Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Irradiat Simulat & E, POB 69-10, Xian 710024, Peoples R China;
Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Irradiat Simulat & E, POB 69-10, Xian 710024, Peoples R China;
Cogenda Co Ltd, SISPARK 2 Room C102-1,1355 Jinjihu Ave, Suzhou, Jiangsu, Peoples R China;
Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Irradiat Simulat & E, POB 69-10, Xian 710024, Peoples R China;
Cogenda Co Ltd, SISPARK 2 Room C102-1,1355 Jinjihu Ave, Suzhou, Jiangsu, Peoples R China;
Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Irradiat Simulat & E, POB 69-10, Xian 710024, Peoples R China;
Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Irradiat Simulat & E, POB 69-10, Xian 710024, Peoples R China;
Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Irradiat Simulat & E, POB 69-10, Xian 710024, Peoples R China;
Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Irradiat Simulat & E, POB 69-10, Xian 710024, Peoples R China;
Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Irradiat Simulat & E, POB 69-10, Xian 710024, Peoples R China;
Tsinghua Univ, Dept Engn Phys, Key Lab Particle & Radiat Imaging, Minist Educ, Beijing 100084, Peoples R China;
Single-event transient (SET); Combinational logic; SET pulse width; Pulsed laser;
机译:在Alpha辐射下90nm大容量CMOS中取决于电源电压的片上单事件瞬态脉冲形状测量
机译:采用90nm SiGe BiCMOS技术设计的精密电压基准电路的单事件瞬态和总剂量响应
机译:基于SCR的瞬态检测电路,用于针对系统级电瞬变干扰的片上保护设计
机译:亚阈值电路中的α粒子和中子诱发的单事件瞬态测量
机译:三维集成电路中的硅通孔电感:片上应用的建模与设计
机译:0.1μmAlGaN / GaN高电子迁移率晶体管(HEMT)工艺的改进大信号模型及其在W波段实用单片微波集成电路(MMIC)设计中的应用
机译:片上采样器在集成电路测试和测量中的应用
机译:片上采样器在集成电路测试和测量中的应用