Epitaxy and wafer bonding of AlGalnP multiple-quantum wells and light-emitting diodes on 8″ Si substrates

摘要

The integration of direct bandgap III-V semiconductors on Si substrate can enable efficient light emitters, and many applications that need light sources would be benefited, such as lighting, display, photonic integrated circuits (PICs), and on-chip optical communications. AlGaInP that is lattice-matched to GaAs is an efficient light emitting material which emits red to yellow-green light, depending on composition. It has been widely used for commercial red and yellow-green light emitting diodes (LEDs). To integrate AlGaInP on Si substrate, however, there are many challenges remaining, both in the epitaxy growth and integration processing. Here, we demonstrate our work on the epitaxy and wafer bonding of AlGaInP materials on 8" Si substrates.