High-Temperature Stability of 650-nm Resonant-Cavity Light-Emitting Diodes Fabricated Using Wafer-Bonding Technique on Silicon Substrates

摘要

AlGaInP-based visible 650-nm GaInP– AlGaInP resonant-cavity light-emitting diodes (RCLEDs) with high- temperature stability were fabricated by wafer-bonding techniques on Si substrates. In this study, the metal-bonding RCLEDs (MBRCLEDs) devices were designed with 84-$mu$m apertures for light output. The MBRCLEDs with a maximum wall-plug efficiency of 13.7% were demonstrated at an injection current of 2.5 mA. In addition, the improved heat sinking of MBRCLEDs led to lower junction temperature, and resulted in a very low power decay of 0.31 dB from room temperature to 100 $^{circ}$C at an injection current of 20 mA.