Through silicon via to FinFET noise coupling in 3-D integrated circuits

摘要

High speed TSV signals can penetrate through the dielectric liner material, transfer in the silicon substrate and degrade the performance of FEOL devices. In this paper we investigate TSV noise coupling to active device including both FinFET and planar transistors. Calibrated TCAD models are used to perform time domain analysis and understand the mechanisms of substrate noise interaction with active device. Parametric simulations are performed in order to understand the tradeoffs among different design parameters. The results demonstrate superior substrate noise immunity of FinFETs over equivalent planar transistors. In addition we show that a scaled TSV diameter, a novel TSV architecture with thick polymer liner, placing the substrate contact closer to active device and a TSV guard ring helps to mitigate the TSV noise. Finally the importance of electromagnetic coupling effects on Keep Out Zone (KOZ) extraction is illustrated.