The optimization of the high-temperature heat source for a MOCVD vacuum reactor

摘要

Semiconductor equipment usually can be divided into five sub-system modules, (a) heating system, (b) exhausting system, (c) injecting system, (d) power control and (e) vacuum chamber. Metal organic chemical vapor deposition (MOCVD) process is the key process to deposit epitaxy thin film, and the uniformity is determined by the distribution of susceptor temperature. This research focuses on the development of high temperature heat source. The finite element software helps to develop the best results about the optimized geometry of the heater, the thickness of the susceptor, and the distance between the heater and susceptor. Furthermore, the optimum geometry of heater is received by numerical analysis combined with power controller. Compare with the experiment, the confidence level of software is 92%.