Indium gallium zinc oxide - Carbon nanotube composite thin film transistor

摘要

We fabricated indium gallium zinc oxide - carbon nanotube composite thin film transistors (IGZO - CNT TFTs) by a simple sputter method. The device performed comparable electrical properties with an on current of 95μA under the drain voltage of 20V. The on/off ratio reached 10. With the CNT embedded into IGZO, the threshold voltage has been improved to 3.4V from 10.8V of IGZO TFT fabricated under the similar condition.