Quantum simulation of Si, GaAs, GaSb, and Ge channel ultra-thin-body double-gate negative capacitance FETs

摘要

Ultra-thin-body double gate negative capacitance FETs (NCFETs) with Si, GaAs, GaSb and Ge channel are investigated by quantum simulations solving Poisson equation and non-equilibrium Green's function self-consistently. Quantum simulations of NCFETs are compared with classical simulations. The design rules for NCFETs in terms of EOT and thickness of ferroelectric are also explored. We found that the performance of Ge channel NCFETs is boosted most: I increases about 22 times compared to Ge channel MOSFETs and a 47.3 mV/decade switching behavior is exhibited.