CMOS integrated circuits; avalanche photodiodes; dark conductivity; low-power electronics; p-n junctions; semiconductor device breakdown; CMOS compatible p-n junction avalanche photodiode; Si; breakdown voltage; dark current; dead space multiplication theory; excess noise; low-voltage operation; mean gain; Avalanche photodiodes; CMOS integrated circuits; Dark current; Doping; Electric breakdown; Noise; Silicon; CMOS; avalanche photodiodes; breakdown; dead space; silicon; smart lighting;
机译:IEC 61000-4-2 ESD发生器的预脉冲电压引起的高压p-n结中的雪崩击穿延迟
机译:具有高雪崩能力的4.9 kV击穿电压垂直GaN p-n结二极管
机译:4.9 kV击穿电压垂直GaN P-n结二极管具有高雪崩功能
机译:低击穿电压CMOS兼容P-N结雪崩光电二极管
机译:用于CMOS兼容的Tranceiver封装的波导耦合的雪崩光电二极管
机译:CMOS光电接收器IC带有片上雪崩光电二极管用于家庭监控激光雷达传感器
机译:背照式深双结CMOS兼容光电二极管像素的增强的UV-Blue响应;高分辨率像素阵列的仿真研究
机译:位移损伤对低击穿电压si雪崩光电二极管的时间分辨增益和带宽的影响