Analytical Modeling of the Surface Potential of Triple Material Symmetrical Gate Stack Double Gate (TMGS-DG) MOSFET

摘要

This paper presents two dimensional (2D) analytical Modeling of the Surface Potential of Triple Material Symmetric Gate Stack Double Gate (TMGS-DG) MOSFET. The model has been derived by solving 2D Poisson's equation in conjunction with suitable boundary conditions. The effect of high-k layer thickness on the potential barrier has been analyzed. The results obtained from the developed model have been compared with the numerical simulation results obtained using ATLAS™ device simulator.