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Fabrication and replication of micro-optical structures for growth of GaN-based light emitting diodes

机译:制备和复制用于生长GaN基发光二极管的微光学结构

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GaN light emitting diodes (LEDs) on sapphire substrates can be improved by micro-patterning substrate to perform epitaxial over-growth which drastically reduces defects' density in the light emitting region. We patterned Al_2O_3 with focused ion beam and show a successful overgrowth of GaN. The exact shape of pattern milled into Al_2O_3 was replicated into a 0.4-mm-thick shim of Ni by electroplating. The surface roughness of Ni was ~5.5 ± 2 nm and is applicable for the most demanding replication of nano-rough surfaces. This technique can be used to replicate flat micro-optical elements Fresnel-axicons defined by electron beam lithography made on sub-1 mm areas without stitching errors (Raith EBL). Shimming of macro-optical elements such as car back-reflectors is also demonstrated. Ni-shimming opens possibility to make replicas of nano-textured small and large area patterns and use them for thermal embossing and molding of optically-functionalized micro-fluidic chips and macro-optical elements.
机译:蓝宝石衬底上的GaN发光二极管(LED)可以通过对衬底进行微构图以执行外延过度生长来改善,从而大大降低发光区域中的缺陷密度。我们用聚焦离子束对Al_2O_3进行了构图,并显示了GaN的成功过度生长。通过电镀将铣削成Al_2O_3的图案的精确形状复制到0.4毫米厚的Ni垫片中。 Ni的表面粗糙度为〜5.5±2 nm,适用于要求最苛刻的纳米粗糙表面的复制。该技术可用于复制由在小于1毫米的区域上进行的电子束光刻所定义的平面微光学元件菲涅耳轴锥,而不会产生缝合误差(Raith EBL)。还演示了对诸如汽车后向反射器之类的宏观光学元件进行匀场。镍匀场为制造纳米纹理的小面积和大面积图案的复制品提供了可能性,并将其用于光学功能化微流控芯片和宏观光学元件的热压印和成型。

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