Resistive switching characteristics of zinc oxide thin films with nickel doped were investigated in this paper. A device cell with the structure of TiN/ZnO/Ni/ZnO/Pt/substrate was fabricated by radio frequency magnetron sputtering. The cells showed stable bipolar with an on/off ratio of ～10~4 at a set voltage of 2V. Comparing with TiN/ZnO/Pt RRAM structure, Ⅰ-Ⅴ curve results of Ni-doped samples demonstrated that the electrical properties of ZnO films changed, especially Ni significantly decreased the reset current of ZnO films. The influence of annealing was also investigated, the results showed that annealing was helpful to reduce reset current and avoid a high-voltage forming process, and annealing with 400 °C is the optimal condition for this structure.
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