Thin film challenges of phase change random access memory

摘要

Phase change random access memory (PCRAM) has been regarded as a promising candidate of the next generation nonvolatile memory because of its high speed, low power, good endurance, good scalability and fabrication compatibility with standard complementary metal-oxide-semiconductor process. Thin film is the most critical module in the fabrication of high density and low power consumption PCRAM as the device continues to scale down to 45 nm and below. This article shall report some key challenges in thin film area. Examples of some thin film process developments, especially in nanoscale gap filling of phase change material, peeling issue and the new phase change material development, will be provided and the preliminary results will be analyzed.