Effective Approach for TSV Cu Plating Gap Fill Improvement

摘要

TSV (Through Silicon Via) is a new method for 3D technology (IC integration). Different chips can be connected with the Cu line through silicon substrate. Via area is so deep (usually 100-300um) that we need thicker barrier and seed layer. The Cu plating is the key step in TSV flow. But we suffered TSV void issue in TSV ECD (Electro Chemical Deposition ) process for TSV seed layer poor condition impact .It is important to understand how to improve TSV Cu plating gap fill capability in order to develop TSV technology. In this paper, the barrier and seed layer performance improvement in TSV Cu plating is introduced, and then an effective approach to improve the TSV plating gap fill capability is demonstrated.