Substrate doping concentration dependence of electron mobility using the effective deformation potential in uniaxial strained nMOSFETs

摘要

The substrate doping concentration dependence of strain-enhanced electron mobility in nMOSFETs is investigated by using the effective deformation potential. The electron mobility model includes coulomb, intravalley phonon, intervalley phonon, and surface roughness scattering. The calculated results suggest that low substrate doping concentration on the (100)/<110> nMOSFETs should be advantageous for strain-induced electron mobility enhancement at high effective electric field.