Synthetic electric field tunnel FETs: Drain current multiplication demonstrated by wrapped gate electrode around ultrathin epitaxial channel

摘要

A synthetic electric field effect to enhance the tunnel FET (TFET) performances is proposed. The TFET utilizes both orthogonal and parallel electric fields induced by a wrapped gate electrode configuration. The device concept was experimentally verified by fabricating Si-TFETs integrated with ultrathin epitaxial channel. Scaling of both the channel width and channel thickness enhances the TFET performance owing to the enhanced synthetic electric field. The results predict that a fin-shape structure is promising for TFETs.