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Degradation of time dependent variability due to interface state generation

机译:由于接口状态生成,时间相关的可变性下降

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Although only a few defects will be present in the gate dielectric of deeply-downscaled CMOS devices, their relative impact may become intolerable [1]. An individual charged defect can significantly alter the channel current ID of a nm-sized FET, causing VTH fluctuations (RTN) and time dependent ΔVTH variability. Based on detailed understanding of atomistic devices, random dopant fluctuation (RDF) was identified as the main source of both time-zero variability and giant RTN fluctuations in ultra-scaled devices [2–3]. In order to reduce variability, the industry is moving to low doped channel devices [4]. Here we show that the adverse role of RDF is taken over by charged interface states. In addition to that, stress during operation induces interface state generation, which in turn causes VTH drift and further increases RTN amplitudes and time-dependent ΔVTH variability.
机译:尽管深度缩小的CMOS器件的栅极电介质中仅会出现一些缺陷,但它们的相对影响可能变得难以忍受[1]。一个单独的带电缺陷会显着改变纳米级FET的沟道电流I D ,从而引起V TH 波动(RTN)和与时间有关的ΔV TH 变异性。根据对原子器件的详细了解,随机掺杂物波动(RDF)被确定为超大规模器件中零时差变化和巨大RTN波动的主要来源[2-3]。为了减少可变性,业界正在转向低掺杂通道设备[4]。在这里,我们显示RDF的不利作用已由带电接口状态接管。除此之外,操作过程中的应力还会引起界面状态的产生,进而引起V TH 漂移,并进一步增加RTN幅度和随时间变化的ΔV TH 变异性。

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