Channel Length and Time Dependent Interface Trap Generation near the Source Due to Hot-Carrier Injection in Metal-Oxide-Semiconductor Field-Effect Transistors

摘要

Interface traps generated due to the hot-carrier effect in metal-oxide-semiconductor field-effect transistors (MOSFETs) are usually considered to be concentrated near the drain. However, hot-carrier induced interface trap generation near the source has also been experimentally observed. As channel lengths shrink, the MOS interface near the source begins to be affected by hot-carriers. In this paper, we studied the channel length dependent interface trap generation near the source. With the initial application of hot carrier stress the number of interface traps generated near the source was much smaller than that near the drain. However, with continued stress, the traps generated near the source become comparable to those near the drain. This phenomenon is explained by the saturation behavior of interface trap generation in MOSFETs by hot-carrier injection.