Fully-depleted planar technologies and static RAM

摘要

Key elements of FDSOI (Fully Depleted Silicon on Insulator) technology as applied to SRAMs are described. Thick- and thin-Bottom Oxide (BOX) variants are discussed. Introduction Fully-depleted transistor technologies, both planar and fin-type, are now in the mainstream [1–4]. They offer unique promise to important circuits such as static RAM cells. Planar fully-depleted devices come in two flavors: extremely thin silicon on a thick BOX or on a thin BOX. The latter configuration allows for spatial and/or temporal modulation of the devices through the potential on the underlying bulk silicon (Fig. 1).