Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET

摘要

In this paper, we describe a compact non-quasi-static (NQS) model of fully-depleted (FD) double-gate (DG) SOI MOSFETs developed on the modified NQS model for bulk single-gate devices. Based on the comparison with the 2-D numerical device simulations, it is shown that new NQS model can accurately predict dc, ac and transient characteristics of FD DG MOSFETs in all operational regions and for small-signal frequencies up to a few cut-off frequencies.