Improved Method to Analysis the Doping Profile for Ion Implants in Silicon

摘要

Ion implantation is a core technology for the fabrication of integrated circuits (IC) and the doping profile determines the device performance. Generally, the doping profile can be controlled by adjusting energy and dose, or multiple implantation steps, which usually costs a lot. In this paper, we present an inexpensive and efficient method for investigation the distributions profile of ion implants in silicon based on SILVACO TCAD tools. The simulated doping profiles of the Born are excellent agreement with the SIMS measurements for a wide range of energies and doses. In addition, doping profiles of the Phosphorus and Arsenic ion for variations in the energy and dose was also investigated in this paper.