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Effects of Diffent Inhibitors on Cu-Co Galvanic Corrosion in Post CMP Cleaning

机译:不同抑制剂对CMP清洗后Cu-Co电镀腐蚀的影响

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The large potential difference between copper and cobalt caused the corrosion of copper and cobalt films and the galvanic corrosion in the process of chemical mechanical planarization (CMP) and post cleaning of cobalt barrier layer. In this paper, the effects of different inhibitors on the inhibition of copper-cobalt galvanic corrosion in the cleaning solution are studied. Different concentrations of inhibitors were added to FA/O II chelating agent as cleaning agent. The inhibition effect was characterized by electrochemical workstation and the cleaning effect of particles was tested by SEM. The results show that the corrosion potential difference of Cu and Co and surface roughness can be significantly reduced with different concentration of inhibitors.
机译:铜和钴之间的巨大电位差异导致铜和钴薄膜的腐蚀以及化学机械平面化(CMP)过程中的电流腐蚀,并在钴屏障层后清洁。本文研究了不同抑制剂对清洁溶液中铜 - 钴电铜腐蚀抑制的影响。将不同浓度的抑制剂作为清洁剂加入到Fa / O II螯合剂中。通过电化学工作站的特征在于抑制效果,通过SEM测试颗粒的清洁效果。结果表明,用不同浓度的抑制剂可以显着降低Cu和Co和表面粗糙度的腐蚀电位差异。

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