Remarkable Breakdown Voltage Enhancement in AlGaN Channel HEMTs

摘要

We demonstrated a remarkable breakdown voltage enhancement in a new high-electron-mobility transistor (HEMT) with a wider bandgap AlGaN channel layer. A Si ion implantation doping technique was utilized to achieve sufficiently low resistive source/drain contacts. The obtained maximum breakdown voltage was 1650 V with a gate-drain distance of 10 μm. This result is very promising for the further higher-power operation of high-frequency HEMTs.