Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse

摘要

We report a low-density drain high-electron mobility transistor (LDD-HEMT) that exhibits enhanced breakdown voltage and reduced current collapse. The LDD region is created by introducing negatively charged fluorine ions in the region between the gate and drain electrodes, effectively modifying the surface field distribution on the drain side of the HEMT without using field plate electrodes. Without changing the device physical dimensions, the breakdown voltage can be improved by 50% in LDD-HEMT, and the current collapse can be reduced. No degradation of current cutoff frequency $(f_{t})$ and slight improvement in power gain cutoff frequency $(f_{max})$ are achieved in the LDD-HEMT, owing to the absence of any additional field plate electrode.