Density functional theory based simulation of carrier transport in silicon carbide and silicon carbide-silicon dioxide interfaces

摘要

We present density functional theory based calculations of band structure and density of states curves for bulk silicon carbide (SiC) and possible silicon carbide-silicon dioxide (SiC-SiO2) interfaces. We then show carrier transport calculations in these structures using Monte Carlo techniques. This is for understanding the origins of the bandgap traps arising from the SiC-SiO2 interface, which are of relatively high concentration in SiC MOSFETs compared to those in Si MOSFETs. It is also for investigating the effects of different atomic configurations on channel mobility, on-resistance, and thus losses in SiC power MOSFETs that are used as low-loss switching devices in high power high temperature applications.