首页> 外国专利> SILICON CARBIDE-SILICON DIOXIDE-CARBON COAXIAL NANO CABLE, ITS MANUFACTURING METHOD, SILICON CARBIDE NANO ROD, NANO CHAIN JOINED WITH CARBON NANO TUBE AND ITS MANUFACTURING METHOD

SILICON CARBIDE-SILICON DIOXIDE-CARBON COAXIAL NANO CABLE, ITS MANUFACTURING METHOD, SILICON CARBIDE NANO ROD, NANO CHAIN JOINED WITH CARBON NANO TUBE AND ITS MANUFACTURING METHOD

机译:碳化硅-二氧化硅/二氧化碳同轴纳米电缆,其制造方法,碳化硅纳米棒,碳纳米管连接纳米链及其制造方法

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide-silicon dioxide-carbon coaxial nano cable useful as a material for a microelectronics device; its simple manufacturing method; a silicon carbide nano rod; a nano chain joined with a carbon nano tube; and its simple manufacturing method.;SOLUTION: A mixture of silicon monoxide powder and iron powder is put in a boron nitride crucible, and this crucible is arranged in a heating furnace. After reducing pressure from the inside of this heating furnace, the silicon carbide-silicon dioxide-carbon coaxial nano cable is provided by heating at 1,450 °C to 1,650 °C while flowing methane gas. The silicon carbide nano rod and the nano chain joined with the carbon nano tube are provided by heating its silicon carbide-silicon dioxide-carbon coaxial nano cable at 1,500 °C to 1,800 °C in the pressure-reduced heating furnace.;COPYRIGHT: (C)2005,JPO&NCIPI
机译:要解决的问题:提供一种用作微电子设备材料的碳化硅-二氧化硅-碳同轴纳米电缆;其简单的制造方法;碳化硅纳米棒;与碳纳米管连接的纳米链;解决方案:将一氧化硅粉末和铁粉末的混合物放入氮化硼坩埚中,并将该坩埚置于加热炉中。在从该加热炉内部减压之后,通过在使甲烷气体流动的同时在1450℃至1650℃下加热来提供碳化硅-二氧化硅-碳同轴纳米电缆。碳化硅纳米棒和与碳纳米管相连的纳米链是通过在减压加热炉中将其碳化硅-二氧化硅-碳同轴纳米电缆在1,500℃至1,800℃下加热而提供的。 :(C)2005,日本特许厅

著录项

  • 公开/公告号JP2005262346A

    专利类型

  • 公开/公告日2005-09-29

    原文格式PDF

  • 申请/专利权人 NATIONAL INSTITUTE FOR MATERIALS SCIENCE;

    申请/专利号JP20040075362

  • 发明设计人 BANDO YOSHIO;LI YUBAO;

    申请日2004-03-16

  • 分类号B82B1/00;B82B3/00;C01B31/02;C01B31/36;

  • 国家 JP

  • 入库时间 2022-08-21 22:34:45

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号