Investigation of the self-heating effect on hot-carrier characteristics for packaged high voltage devices

摘要

HVNMOS device degradation due to AC/DC hot carrier injection (HCI) stress between package level (PL) and wafer level (WL) is characterized and their relationship to the power generation is quantified. It is observed that Idlin degradation in PL is worse compared to WL during DC HCI stress due to excessive self-heating (SH) in PL compared to WL. It is also validated that SH mechanism is the dominant factor for Idlin degradation compared to HCI impact ionization during packaged HVNMOS HCI stress. A new reliability characterization methodology for HVNMOS is also proposed, which eliminates the PL SH effect and boost up the product safe-operating-area (SOA) capability.