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Voltage characteristic regulator of voltage characteristic adjustment method and latch circuit of the voltage characteristic adjustment method and semiconductor device of the latch circuit
Voltage characteristic regulator of voltage characteristic adjustment method and latch circuit of the voltage characteristic adjustment method and semiconductor device of the latch circuit
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机译:电压特性调整方法的电压特性调节器和锁存电路的电压特性调整方法以及半导体装置
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摘要
The voltage Vdd is set to be lower than in the normal operation (step S100), then voltage is applied to each of the power-supply voltage applied node Vdd, the ground voltage applied node Vss, the semiconductor substrate and the well so that relative high voltage between the gate of turn-on transistor and the semiconductor substrate or the gate of turn-on transistor and well (steps S110 and S120). This process accomplishes rising of the threshold voltage of the transistor that is turned on, the reduction of the variation in the threshold voltage between a plurality of the transistors of the memory cell including latch circuit, and the improvement of the voltage characteristic of the memory cell.
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