Monte Carlo Simulation of Impact of Random Telegraph Noise in 45 nm MOSFET Due to Combined Effects of Random Interface Traps and Random Channel Dopant Distributions

摘要

This paper presents a 3-D Ensemble Monte Carlo (EMC) based simulation for 45 nm gate length MOSFET to account for the fluctuations in drain current (saturation) and threshold voltage as causes of reliability failures integrating the effects of (1) statistical fluctuations in number and position of the dopant atom (RDF) in the channel region and (2) trapping or de-trapping of single or multiple carriers in the defect states positioned near the Si:SiO_2 interface and at random locations in the inversion region between source and drain. Our thorough investigations suggest that the fluctuations in threshold voltage and its standard deviation are considerably larger than the on-current fluctuations for randomly chosen dopant distributions in the channel and bulk regions. In addition, the random location and number of trap are not correlated with those of channel dopants making the reliability projection dependent on averaged statistic of a large number of random channel dopants and strategic positioning of the traps in the channel.