Accurate Model for the Threshold Voltage Fluctuation Estimation in 45-nm Channel Length MOSFET Devices in the Presence of Random Traps and Random Dopants

摘要

A physical-based analytical model to predict the fluctuations in threshold voltage induced by a single interface trap at a random location along the channel in a typical sub-50-nm MOSFET is of utmost significance. In this letter, simulation results from two different analytical models and particle-based device ensemble Monte Carlo schemes are used to compute threshold voltage variation in the presence of interface traps at a certain location in the channel. These results provide clear evidence that, without the accurate short-range Coulomb force correction, the analytical models will provide inconsistent $V_{T}$ for traps located near the source of the MOSFET device with 32-nm effective channel length.