首页> 外文会议>ASME InterPack conference;IPACK2009 >THE CHARACTERIZATION OF DAMAGE PROPAGATION OF BGA FLIP-CHIP ELECTRONIC PACKAGES UNDER MECHANICAL SHOCK LOADING
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THE CHARACTERIZATION OF DAMAGE PROPAGATION OF BGA FLIP-CHIP ELECTRONIC PACKAGES UNDER MECHANICAL SHOCK LOADING

机译:机械冲击载荷下BGA倒装芯片电子封装的损伤传播特性

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Increasing power and I/O demands in HDI (high density interconnect) components coupled with the industry-wide conversion to lead-free products has introduced additional risk for solder joint reliability (SJR) of BGA (ball grid array) Flip-Chip electronic packages. One particular concern is SJR under mechanical shock (dynamic bend) loading. While leaded alloys provided good performance in shock for many years due to the unparalleled ability of lead's slip systems to absorb the energy in shock events, lead-free alloys cannot provide the same benefit. To mitigate this risk, better approaches for understanding damage propagation are needed to enable better design to limit and reduce the SJR risk during shipping and end-user handling.To this end, a characterization study is undertaken to monitor damage progression at the second-level interconnect in BGA's on flip-chip electronic packages during mechanical shock loading. The study uses a board-level, strain-monitoring approach plus the dye and peel failure analysis technique to track the initiation and propagation of solder joint cracks under loading. The approach being used differs from conventional reliability testing in that both design and load variables are used to quantify damage growth and strain response to bridge the understanding of design feature impact to traditional reliability testing. The scope of the study includes investigating the impact of such factors as package placement, board layout, and enabling load on the monitored board strain and the damage propagation observed. From this study, directions and design guidelines for improving solder joint reliability of future BGA's on flip-chip electronic packages under mechanical shock loading conditions are proposed.
机译:HDI(高密度互连)组件对功率和I / O的要求不断提高,再加上行业范围内向无铅产品的转换,给BGA(球栅阵列)倒装芯片电子封装的焊点可靠性(SJR)带来了额外的风险。一个特别关注的问题是在机械冲击(动态弯曲)载荷下的SJR。尽管铅合金由于铅的滑移系统在冲击事件中吸收能量的无与伦比的能力在冲击方面提供了许多年的良好性能,但无铅合金却无法提供相同的益处。为了减轻这种风险,需要更好的方法来了解损坏的传播,以实现更好的设计,以限制和降低运输和最终用户处理过程中的SJR风险。 为此,进行了一项特性研究​​,以监测机械冲击加载期间BGA倒装芯片电子封装中第二级互连处的损坏进度。这项研究使用了板级应变监测方法以及染料和剥离失效分析技术来跟踪负载下焊点裂纹的产生和扩展。所使用的方法与常规可靠性测试的不同之处在于,设计变量和载荷变量均用于量化损伤的增长和应变响应,从而将对设计特征影响的理解与传统的可靠性测试相结合。研究范围包括调查诸如封装放置,电路板布局以及使负载受监控的电路板应变和观察到的损伤传播等因素的影响。通过这项研究,提出了在机械冲击载荷条件下提高未来BGA在倒装芯片电子封装上的焊点可靠性的方向和设计指南。

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